BC516 Transistor

This device is designed for applications reguiring extremely high current gain at currents to 1mA

Type Designator: BC516

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 30000

 

 

  • N/A

More from this Category

Power MOSFET N-Channel (IRLB8743, 30V / 150A)

Power MOSFET N-Channel (IRLB8743, 30V / 150A)

R 28.00 View
N-MOSFET Transistor 75V 80A 300W 9.5mΩ (P75NF75, TO-220)

N-MOSFET Transistor 75V 80A 300W 9.5mΩ (P75NF75, TO-220)

R 11.20 View
2N3055 BJT (15A, 100V, 115W, NPN TO-3 Transistor)

2N3055 BJT (15A, 100V, 115W, NPN TO-3 Transistor)

R 11.76 View
BTA16-600B Triac

BTA16-600B Triac

R 16.80 View
C945 Transistor

C945 Transistor

R 1.12 View
2N4401 BJT Transistor (NPN 40V, 600mA, TO-92)

2N4401 BJT Transistor (NPN 40V, 600mA, TO-92)

R 5.60 View
E13005-2 Transistor (NPN High voltage. High Speed Switch)

E13005-2 Transistor (NPN High voltage. High Speed Switch)

R 5.60 View
2N2222 Transistor (TO-92)

2N2222 Transistor (TO-92)

R 1.12 View
D882P (TO-126) Transistor

D882P (TO-126) Transistor

R 2.80 View
TIP122 Transistor (5A/100V NPN TO-220 Darlington)

TIP122 Transistor (5A/100V NPN TO-220 Darlington)

R 16.80 View