2N4401 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. 2N4401has a gain value hfe of 500; this value determines the amplification capacity of the transistor.
An introduction to the 2n4401 is available at: https://www.theengineeringprojects.com/2018/02/introduction-to-2n4401.html
Power dissipation PCM: 0.6 W(Tamb=25O C)
Collector current ICM: 0.6 A
Collector-base voltage V(BR)CBO: 60 V
- N/A
More from this Category
Power MOSFET N-Channel (IRLB8743, 30V / 150A)
R 28.00
View
N-MOSFET Transistor 75V 80A 300W 9.5mΩ (P75NF75, TO-220)
R 11.20
View
2N3055 BJT (15A, 100V, 115W, NPN TO-3 Transistor)
R 11.76
View
BTA16-600B Triac
R 16.80
View
C945 Transistor
R 1.12
View
E13005-2 Transistor (NPN High voltage. High Speed Switch)
R 5.60
View
2N2222 Transistor (TO-92)
R 1.12
View
D882P (TO-126) Transistor
R 2.80
View
TIP122 Transistor (5A/100V NPN TO-220 Darlington)
R 16.80
View
MBR20150CT DUAL DIODE SCHOTTKY BARRIER (150V, 20A)
R 11.20
View